Impact of Strain or Ge Content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs

Author

Kumar, M. Jagadesh ; Venkataraman, Vivek ; Nawal, Susheel

Author_Institution

Indian Inst. of Technol., New Delhi

Volume

7

Issue

1

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

181

Lastpage

187

Abstract

The impact of strain on the threshold voltage of nanoscale strained-Si/SiGe MOSFETs is studied by developing a compact analytical model. Our model includes the effects of strain (Ge mole fraction in SiGe substrate), short-channel length, source/drain junction depths, substrate (body) doping, strained silicon thin-film thickness, gate work function, and other device parameters. The model correctly predicts a decrease in threshold voltage with increasing strain in the silicon thin film, i.e., with increasing Ge concentration in SiGe substrate. The accuracy of the results obtained using our analytical model is verified using two-dimensional device simulations.

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; germanium; nanoelectronics; semiconductor device models; semiconductor doping; semiconductor materials; semiconductor thin films; silicon; Si-SiGe - Interface; SiGe - Surface; gate work function; nanoscale strained bulk MOSFET; short-channel length; silicon thin film; source/drain junction depth; substrate doping; threshold voltage; Analytical models; Capacitive sensors; Doping; Germanium silicon alloys; MOSFETs; Semiconductor process modeling; Semiconductor thin films; Silicon germanium; Substrates; Threshold voltage; Nanoscale strained-Si/SiGe MOSFET; short-channel effects; simulation; threshold voltage; two-dimensional modeling;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.889269

Filename

4271498