DocumentCode :
1054057
Title :
Sequential anneal effect on bipolar transistor with phosphorus-implanted emitter
Author :
Koji, Tetsu
Author_Institution :
NEC, Shimonumabe, Kawasaki-shi, Japan
Volume :
23
Issue :
9
fYear :
1976
fDate :
9/1/1976 12:00:00 AM
Firstpage :
1103
Lastpage :
1104
Abstract :
An n-p-n-type bipolar transistor with an emitter region formed by a new ion implantation predeposition diffusion exhibits much less leakage current compared to that formed by a conventional process. This new emitter region has a thermal history of first anneal at 500°C, second anneal at 900°C, and third anneal at 1050°C after phosphorus implantation predeposition of 1 × 1016/cm2at 50 keV.
Keywords :
Annealing; Bipolar transistors; Electrostatic discharge; FETs; Humans; Instruments; Integrated circuit modeling; Ion implantation; Neodymium; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18545
Filename :
1478558
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1054057
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