Development of the radiation sensitivity of PMOS dosimeters

Author

Kelleher, A. ; O´Sullivan, M. ; Ryan, J. ; O´Neill, B. ; Lane, W.

Author_Institution

Nat. Microelectron. Res. Centre, Univ. Coil., Cork, Ireland

Volume

39

Issue

3

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

342

Lastpage

346

Abstract

The effect of gate oxide growth conditions on the sensitivity of the NMRC´s PMOS RADFET, which has a 400-nm dry/wet/dry gate oxide is investigated. The necessity for such an evaluation arose because the PMOS RADFET standard gate oxide consists of a dry/wet/dry 400-nm oxide, and published data for the effects of processing conditions on gate oxides are mainly for either wet or dry oxides with a thickness in the more conventional gate oxide range of 20 nm-100 nm. It is clearly shown that, for any given RADFET gate oxide, an optimum set of processing conditions exists to maximize the RADFET´s radiation sensitivity. A by-product of the evaluation of the processing conditions is that it is possible to set up a sensitivity-oxide thickness curve at the optimum processing conditions.<>

Keywords

dosimeters; insulated gate field effect transistors; oxidation; radiation monitoring; 20 to 100 nm; 400 nm; NMRC´s PMOS RADFET; PMOS RADFET standard gate oxide; PMOS dosimeters; RADFET; SiO/sub 2/ films; dry oxides; dry-wet-dry oxide; gate oxide; gate oxide growth conditions; optimum processing conditions; oxide thickness; processing conditions; radiation sensitivity; sensitivity-oxide thickness curve; wet oxides; Dosimetry; Educational institutions; Fabrication; Interface states; MOSFET circuits; Microelectronics; Personnel; Space vehicles; Stability; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.277514

Filename

277514