Title :
An efficient passivated TRAPATT diode structure
Author :
Kroger, H. ; Grace, M.I. ; Currier, L.W.
Author_Institution :
Sperry Research Center, Sudbury, MA
fDate :
9/1/1976 12:00:00 AM
Abstract :
A TRAPATT diode has been fabricated using a variation of silicon planar technology. Its design combines the advantages of the surface stability of the planar process with low parasitic capacitance usually associated only with mesa devices. Since shallow diffusions may be used, the device retains an excellent heat-dissipation capability.
Keywords :
Bandwidth; Breakdown voltage; Diodes; Etching; Oscillators; Parasitic capacitance; Platinum; Silicon; Sputtering; Stability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18548
