Broadly-tunable resonant-cavity light-emitting diode

Author

Larson, M.C. ; Harris, J.S., Jr.

Author_Institution

Solid State Electron. Lab., Stanford Univ., CA, USA

Volume

7

Issue

11

fYear

1995

Firstpage

1267

Lastpage

1269

Abstract

Microelectromechanical wavelength tuning is demonstrated for the first time in a resonant-cavity light-emitting diode. The device utilizes a deformable-membrane top mirror suspended by an air gap above a diode-active region and bottom mirror. Applied membrane-substrate bias produces an electrostatic force which reduces the air-gap thickness, and therefore, the resonant wavelength. We report broad tunability of nearly 40 nm and spectral linewidths as narrow as 1.9 nm (2.6 meV) for operation near 950 nm.<>

Keywords

light emitting diodes; micromechanical resonators; mirrors; optical resonators; spectral line breadth; tuning; 2.6 meV; 950 nm; air gap; air-gap thickness; applied membrane-substrate bias; bottom mirror; broad tunability; broadly-tunable resonant-cavity light-emitting diode; deformable-membrane top mirror; diode-active region; electrostatic force; microelectromechanical wavelength tuning; p-i-n photodiodes; resonant wavelength; semiconductor quantum wells; spectral linewidths; Biomembranes; Distributed Bragg reflectors; Gallium arsenide; Light emitting diodes; Mirrors; Optical interconnections; Optical refraction; Optical tuning; Resonance; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473467

Filename

473467