• DocumentCode
    1054094
  • Title

    Transient behavior of impact ionization in silicon

  • Author

    Shekhar, Chandra ; Khokle, W.S.

  • Author_Institution
    Central Electronics Engineering Research Institutes, Pilani, (Raj.), India
  • Volume
    23
  • Issue
    9
  • fYear
    1976
  • fDate
    9/1/1976 12:00:00 AM
  • Firstpage
    1109
  • Lastpage
    1110
  • Abstract
    A transient solution of the ionization coefficient for electrons (α) in silicon has been obtained for various electric field strengths. The results show that α takes a longer time to come to its steady-state value for lower electric field strengths. The time the transient lasts is of the order of 10-13s.
  • Keywords
    Aerospace electronics; Effective mass; Electron optics; Impact ionization; Optical scattering; Phonons; Photonic band gap; Silicon; Solids; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18549
  • Filename
    1478562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054094