Title :
Radiation tolerant silicon gate CMOS/SOS using ion implantation
Author :
Ipri, A.C. ; Flatley, D.W.
Author_Institution :
RCA Corporation, David Sarnoff Research Center, Princeton, NJ
fDate :
9/1/1976 12:00:00 AM
Abstract :
A process technology is described which incorporates ion implantation for the fabrication of CMOS/SOS silicon-gate integrated circuits. The n and p channel transistors are shown to have normal device characteristics and, in addition, exhibit an increased tolerance to threshold shifts in radiation environments.
Keywords :
Aluminum; Annealing; Boron; CMOS technology; Fabrication; Integrated circuit technology; Ion implantation; Oxidation; Resists; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18550
