Title :
Broad-band light-emitting diode for 1.4-2.0 μm using variable-composition InGaAs quantum wells
Author :
Fritz, I.J. ; Klem, J.F. ; Hafich, M.J. ; Howard, A.J. ; Hjalmarson, H.P.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We describe a novel broad-band light-emitting diode employing InGaAs quantum wells with different bandgaps. The device structures were grown by molecular-beam epitaxy on InP substrates and consist of three In/sub x/Ga/sub 1-x/As quantum wells (x=0.4, 0.53, and 0.66) imbedded in the p-doped region of an InAlAs p-n junction diode. Electrons injected into the p-region are captured into the wells and recombine with holes to produce radiation at the three bandgap wavelengths. Broad-band emission over a large wavelength range (1.4-2.0 μm) is easily achieved with this approach. These novel solid-state sources have a variety of potential applications, for example, in miniature spectrometer and sensor systems."
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; substrates; 1.4 to 2 mum; In/sub x/Ga/sub 1-x/As quantum wells; InAlAs p-n junction diode; InGaAs; InGaAs quantum wells; InP substrates; bandgap wavelengths; bandgaps; broad-band emission; broad-band light-emitting diode; device structures; electron capture; electron hole recombination; electron injection; light-emitting diode; miniature spectrometer; molecular-beam epitaxy; p-doped region; p-region; sensor systems; solid-state sources; variable-composition InGaAs quantum wells; Charge carrier processes; Indium compounds; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Molecular beam epitaxial growth; P-n junctions; Photonic band gap; Radiative recombination; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
