Title :
New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation
Author :
Parthasarathy, Chittoor R. ; Denais, M. ; Huard, Vincent ; Ribes, Guillaume ; Vincent, Emmanuel ; Bravaix, Alain
Author_Institution :
STMicroelectron., Crolles
fDate :
3/1/2007 12:00:00 AM
Abstract :
In this paper, we investigate the recovery characteristics associated with negative bias temperature instability and channel hot carrier degradation in p-channel metal-oxide-semiconductor using a novel method of on-the-fly patterns of biases. We demonstrate experimentally that we can identify two types of mechanisms associated with degradation. One of them is associated with recovery dynamics, and the other relates to nonrecoverable degradation.
Keywords :
MOSFET; hot carriers; semiconductor device reliability; channel hot carrier degradation; negative bias temperature instability; nonrecoverable degradation; p-channel metal-oxide- semiconductor; recovery dynamics; Circuits; Degradation; Hot carriers; MOSFETs; Negative bias temperature instability; Niobium compounds; Plasma temperature; Probes; Stress; Titanium compounds; Channel hot carrier (CHC); negative bias temperature instability (NBTI); on-the-fly (OTF) pattern method; recovery; trapping;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.898085
