• DocumentCode
    1054136
  • Title

    High total dose effects on CMOS/SOI technology

  • Author

    Flament, O. ; Dupont-Nivet, E. ; Leray, J.L. ; Pere, J.F. ; Delagnes, E. ; Auberton-Herve, A.J. ; Giffard, B. ; Borel, G. ; Ouisse, T.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-Le-Chatel, France
  • Volume
    39
  • Issue
    3
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    376
  • Lastpage
    380
  • Abstract
    CMOS silicon-on-insulator (SOI) technology has shown its ability to process hardened components which remain functional after irradiation with a total dose of several tens of megarads. New tests on elementary transistors and the 29101 microprocessor have been made at doses up to 100 Mrad(SiO2) and above. Results of irradiation at these total doses are presented for different biases, together with the post-irradiation behavior of the components. All the observations show that new parameters must be taken into account for hardness assurance at a high level of total dose. This study has shed light on some of the data required to understand the underlying physics and which must be taken into account to provide hardness assurance: in particular, the variation of the threshold voltage shift with the gate length, the recovery phenomena after a very high dose irradiation, and the influence of the dynamic bias on the hardness
  • Keywords
    CMOS integrated circuits; insulated gate field effect transistors; microprocessor chips; radiation hardening (electronics); 100E6 Rad; 29101 microprocessor; CMOS/SOI technology; Si-SiO2; dynamic bias; elementary transistors; gate length; hardness assurance; high dose irradiation; post-irradiation behavior; process hardened components; recovery phenomena; single transistors; threshold voltage shift; total dose effects; underlying physics; CMOS process; CMOS technology; Electrodes; Insurance; Isolation technology; Microprocessors; Silicon on insulator technology; Testing; Voltage; X-rays;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.277521
  • Filename
    277521