DocumentCode :
1054140
Title :
A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models
Author :
Reisinger, Hans ; Blank, Oliver ; Heinrigs, Wolfgang ; Gustin, Wolfgang ; Schlünder, Christian
Author_Institution :
Infineon Technol., Munich
Volume :
7
Issue :
1
fYear :
2007
fDate :
3/1/2007 12:00:00 AM
Firstpage :
119
Lastpage :
129
Abstract :
A new measuring technique with a 1mus measuring delay and a direct VT determination has been employed. The response to stress times as short as 100 mus to 105 has been studied as well as recovery over 12 decades in time. These experimental data allow a meaningful comparison to theory. Degradation data cut be precisely fitted to a simple physical model with 3 parameters thus enabling a reliable lifetime prediction from stress times below 104s.
Keywords :
MOSFET; hole traps; bulk hole trapping; degradation recovery components; direct determination; lifetime prediction; physical models; stress times; Current measurement; Degradation; Delay; Hydrogen; Negative bias temperature instability; Niobium compounds; Stress measurement; Switches; Titanium compounds; Voltage; MOSFET; negative bias temperature instability (NBTI); recovery; relaxation;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2007.898229
Filename :
4271508
Link To Document :
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