Title :
ESD Evaluation of the Emerging MuGFET Technology
Author :
Russ, Christian C. ; Gossner, Harald ; Schulz, Thomas ; Chaudhary, Nirmal ; Xiong, Weize ; Marshall, Andrew ; Duvvury, Charvaka ; Schrüfer, Klaus ; Cleavelin, C. Rinn
Author_Institution :
Infineon Technol. AG, Munich
fDate :
3/1/2007 12:00:00 AM
Abstract :
Electrostatic discharge (ESD) characteristics of fully depleted FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET Technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with - characteristics beneficial for ESD protection.
Keywords :
electrostatic discharge; field effect transistors; silicon-on-insulator; FinFET devices; MuGFET technology; electrostatic discharge; failure analysis; silicon on insulator; transmission line pulse; CMOS technology; Charge carriers; Electrostatic discharge; FETs; FinFETs; Instruments; Isolation technology; Manufacturing; Partial discharges; Silicon on insulator technology; Electrostatic discharge (ESD); FinFET; failure analysis; multiple-gate FET (MuGFET); silicon on insulator (SOI); transmission line pulse (TLP);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.888288
