Title :
Failure Model for Silver Electrochemical Migration
Author :
Yang, Shuang ; Christou, Aristos
Author_Institution :
Maryland Univ., College Park
fDate :
3/1/2007 12:00:00 AM
Abstract :
A new model for silver electrochemical migration is presented, which includes the insulation resistance degradation prior to dendritic growth. This failure model reported is based on the calculation of the ion accumulation rate. Failure occurs when the accumulated ion concentration exceeds the threshold. Experimental measurements have been carried out to validate the model. Experiments under various temperature-humidity-bias conditions are reported.
Keywords :
electrochemical devices; insulation; accumulated ion concentration; dendritic growth; failure model; insulation resistance degradation; ion accumulation rate; silver electrochemical migration; temperature-humidity-bias conditions; Anodes; Cathodes; Conductors; Degradation; Electrochemical machining; Electrodes; Humidity; Insulation; Silver; Testing; Dendrite; electrochemical migration (ECM); insulation resistance; ion accumulation; ion generation;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.891531
