3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit

Author

Krishnamoorthy, A.V. ; Lentine, A.L. ; Goossen, K.W. ; Walker, J.A. ; Woodward, T.K. ; Ford, J.E. ; Aplin, G.F. ; D´Asaro, L.A. ; Hui, S.P. ; Tseng, B. ; Leibenguth, R. ; Kossives, D. ; Dahringer, D. ; Chirovsky, L.M.F. ; Miller, D.A.B.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

7

Issue

11

fYear

1995

Firstpage

1288

Lastpage

1290

Abstract

We accomplish the integration of GaAs-AlGaAs multiple quantum well modulators directly on top of active silicon CMOS circuits. This enables optoelectronic VLSI circuits to be achieved and also allows the design and optimization of the CMOS circuits to proceed independently of the placement and the bonding of surface-normal optical modulators to the circuit. Using this technique, we demonstrate operation of a 0.8 micron CMOS transimpedance receiver-transmitter circuit at 375 Mb/s.<>

Keywords

CMOS integrated circuits; III-V semiconductors; VLSI; aluminium compounds; circuit optimisation; electro-optical modulation; gallium arsenide; integrated circuit design; integrated optoelectronics; optical design techniques; optical receivers; optical transmitters; semiconductor quantum wells; 375 Mbit/s; 3D integration; CMOS circuits; CMOS transimpedance receiver-transmitter circuit; GaAs-AlGaAs; GaAs-AlGaAs multiple quantum well modulators; MQW modulators; active silicon CMOS circuits; active submicron CMOS circuits; design; optimization; optoelectronic VLSI circuits; surface-normal optical modulators; transimpedance receiver-transmitter circuit; Bonding; Circuits; Optical buffering; Optical interconnections; Optical modulation; Optical receivers; Optical transmitters; Quantum well devices; Silicon; Very large scale integration;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473474

Filename

473474