Title :
3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit
Author :
Krishnamoorthy, A.V. ; Lentine, A.L. ; Goossen, K.W. ; Walker, J.A. ; Woodward, T.K. ; Ford, J.E. ; Aplin, G.F. ; D´Asaro, L.A. ; Hui, S.P. ; Tseng, B. ; Leibenguth, R. ; Kossives, D. ; Dahringer, D. ; Chirovsky, L.M.F. ; Miller, D.A.B.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We accomplish the integration of GaAs-AlGaAs multiple quantum well modulators directly on top of active silicon CMOS circuits. This enables optoelectronic VLSI circuits to be achieved and also allows the design and optimization of the CMOS circuits to proceed independently of the placement and the bonding of surface-normal optical modulators to the circuit. Using this technique, we demonstrate operation of a 0.8 micron CMOS transimpedance receiver-transmitter circuit at 375 Mb/s.<>
Keywords :
CMOS integrated circuits; III-V semiconductors; VLSI; aluminium compounds; circuit optimisation; electro-optical modulation; gallium arsenide; integrated circuit design; integrated optoelectronics; optical design techniques; optical receivers; optical transmitters; semiconductor quantum wells; 375 Mbit/s; 3D integration; CMOS circuits; CMOS transimpedance receiver-transmitter circuit; GaAs-AlGaAs; GaAs-AlGaAs multiple quantum well modulators; MQW modulators; active silicon CMOS circuits; active submicron CMOS circuits; design; optimization; optoelectronic VLSI circuits; surface-normal optical modulators; transimpedance receiver-transmitter circuit; Bonding; Circuits; Optical buffering; Optical interconnections; Optical modulation; Optical receivers; Optical transmitters; Quantum well devices; Silicon; Very large scale integration;
Journal_Title :
Photonics Technology Letters, IEEE
