Title :
A multi MRad hardened 8 bit/20 MHz flash ADC
Author :
Baille, F. ; Borel, G. ; Commere, B. ; Roy, F. ; Delmas, C. ; Terrier, C.
Author_Institution :
Thomson Composants Militaires et Spatiaux, Saint-Egreve, France
fDate :
6/1/1992 12:00:00 AM
Abstract :
An 8-bit, 20-MHz flash ADC (analog-to-digital converter) using a radiation-hardened SOI (silicon on insulator) process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 Mrad (SiO2) (10 keV X-rays). Simultaneous use of a rad-hard technology and optimized design in order to withstand the effects of a total dose made it possible to achieve a rad-hard product
Keywords :
CMOS integrated circuits; X-ray effects; analogue-digital conversion; integrated circuit technology; radiation hardening (electronics); 10 keV; 1E8 rad; 20 MHz; 8 bit; CMOS SOI; Si-SiO2; X-rays; analog-to-digital converter; flash ADC; optimized design; rad-hard technology; radiation-hardened SOI; silicon on insulator; total dose exposure; Binary codes; CMOS logic circuits; CMOS technology; Clocks; Flip-flops; Master-slave; Production; Radiation hardening; Read only memory; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
