• DocumentCode
    1054229
  • Title

    Voltage distributions in X-band n+-n-n+Gunn devices using a SEM

  • Author

    Fentem, Philip John ; Gopinath, Anand

  • Author_Institution
    University College of North Wales, Gwynedd, UK
  • Volume
    23
  • Issue
    10
  • fYear
    1976
  • fDate
    10/1/1976 12:00:00 AM
  • Firstpage
    1159
  • Lastpage
    1165
  • Abstract
    The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n+-n-n+mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopic mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.
  • Keywords
    Computer simulation; Electron beams; Electron emission; Geometry; Gunn devices; Instruments; Probes; Scanning electron microscopy; Spatial resolution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18562
  • Filename
    1478575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054229