Title :
Microbeam analysis of MOS circuits
Author :
McNulty, P.J. ; Beauvais, W.J. ; Roth, D.R. ; Lynch, J.E. ; Knudson, A.R. ; Stapor, W.J.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
Irradiation of MOS SRAMs (static random access memories) by energetic heavy ions results in pulses on the power lines of the device. Pulse-height analysis shows a series of peaks when the irradiation consists of identical particles incident in the same direction. Analysis through a microbeam shows that the pulses are generated by traversals of the p-n junctions making up the transistors of the device. Junctions in the memory array were found to dominate the spectrum from a CMOS device while those of the support circuitry dominate the spectrum from a DRAM (dynamic RAM). Charge collection spectra measured while the chip is irradiated by 20-MeV ions confined to a 10-μm beam spot show the individual peaks of the CMOS SRAM spectra appearing and disappearing as the beam location spot moves across the memory cells
Keywords :
CMOS integrated circuits; DRAM chips; SRAM chips; ion beam effects; ion microprobe analysis; radiation hardening (electronics); 10 micron; 20 MeV; CMOS device; DRAM; MOS circuits; SRAM; energetic heavy ions; microbeam analysis; p-n junctions; pulse height analysis; pulses on power lines; static random access memories; unbiased MOS devices; CMOS memory circuits; Charge measurement; Circuit analysis; Current measurement; DRAM chips; P-n junctions; Pulse generation; Random access memory; SRAM chips; Semiconductor device measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
