Title :
Investigation of the aging processes of the p-n junction based on a single dislocation
Author :
Mil´shtein, S.Kh.
Author_Institution :
The Hebrew University, Jerusalem, Israel
fDate :
10/1/1976 12:00:00 AM
Abstract :
An investigation was made of the effects of aging on diodes based on 60° dislocations. The electrical properties of the dislocation p-n junctions showed good stability and were unaffected by the Cottrell impurity atmosphere. This property suggests that there are practical uses for semiconductor devices based on the principle of dislocations. A proposed assembly of the diode based on a single 60° dislocation is described.
Keywords :
Aging; Atmosphere; Bonding; Current-voltage characteristics; Etching; Needles; P-n junctions; Semiconductor diodes; Silicon; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18567
