DocumentCode
1054281
Title
Investigation of the aging processes of the p-n junction based on a single dislocation
Author
Mil´shtein, S.Kh.
Author_Institution
The Hebrew University, Jerusalem, Israel
Volume
23
Issue
10
fYear
1976
fDate
10/1/1976 12:00:00 AM
Firstpage
1184
Lastpage
1185
Abstract
An investigation was made of the effects of aging on diodes based on 60° dislocations. The electrical properties of the dislocation p-n junctions showed good stability and were unaffected by the Cottrell impurity atmosphere. This property suggests that there are practical uses for semiconductor devices based on the principle of dislocations. A proposed assembly of the diode based on a single 60° dislocation is described.
Keywords
Aging; Atmosphere; Bonding; Current-voltage characteristics; Etching; Needles; P-n junctions; Semiconductor diodes; Silicon; Tungsten;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18567
Filename
1478580
Link To Document