DocumentCode :
1054290
Title :
Proton bombarded GaAlAs:GaAs light emitting diodes
Author :
Heinen, J. ; Westermeier, H. ; Harth, W. ; Zschauer, K.-H.
Author_Institution :
Technische Universität München, München
Volume :
23
Issue :
10
fYear :
1976
fDate :
10/1/1976 12:00:00 AM
Firstpage :
1186
Lastpage :
1187
Abstract :
High-speed high-radiance luminescent diodes for optical transmission systems have been fabricated. Proton bombardment is used for confining the area of the active region. Modulation cutoff frequencies of 170 MHz and a radiance of 11 W/ sr. cm2at a diode current of 100 mA have been measured.
Keywords :
Capacitance; Current density; Current measurement; Etching; Gold; Heat sinks; High speed optical techniques; Light emitting diodes; Protons; Stimulated emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18568
Filename :
1478581
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1054290
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