Title :
Enhanced capacitor for one-transistor memory cell
Author :
Sodini, Charles G. ; Kamins, Theodore I.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
fDate :
10/1/1976 12:00:00 AM
Abstract :
Ion implantation has been used to increase the depletion-layer capacitance beneath the inversion layer of an MOS capacitor in order to enhance the charge storage per unit area. Boron and arsenic implants were used to increase the depletion-layer capacitance, approximately halving the area required for a given charge storage.
Keywords :
Boron; Capacitance; Conductors; Electron devices; Implants; Light emitting diodes; MOS capacitors; Protection; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18569
