• DocumentCode
    1054321
  • Title

    The buried oxide MOSFET—A new type of high-speed switching device

  • Author

    Shinchi, Osamu ; Sakurai, Junji

  • Author_Institution
    Texas Instruments, Houston, TX
  • Volume
    23
  • Issue
    10
  • fYear
    1976
  • fDate
    10/1/1976 12:00:00 AM
  • Firstpage
    1190
  • Lastpage
    1191
  • Abstract
    A MOSFET of novel structure is proposed, which has a potential advantage on its switching speed. The new structure is similar to that of SOS-MOS which essentially eliminates the junction capacitance of the MOSFET. This structure is fabricated by simultaneous deposition of single and polycrystalline silicon over silicon with selective oxidations already in place. The fabrication process and dc characteristics of the new devices are described. The speed-power characteristics are also evaluated by computer simulations.
  • Keywords
    Capacitance; Communication switching; Dielectric substrates; Fabrication; High speed optical techniques; MOSFET circuits; Optical fiber communication; Oxidation; P-n junctions; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18571
  • Filename
    1478584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054321