Title :
On the determination of surface-state density from MOS C—V measurements
Author_Institution :
University of California, Santa Barbara, CA
fDate :
10/1/1976 12:00:00 AM
Abstract :
Methods of experimentally determining the surface-state density from MOS C-V measurements have been developed under the assumption that the density is approximately constant over the range of several kT about the Fermi level at the surface. This note illustrates that the surface-state density can actually vary quite rapidly in that range (as a result of a large first derivative) with no loss of accuracy.
Keywords :
Capacitance; Capacitance-voltage characteristics; Circuits; Density measurement; Dielectric substrates; Frequency; P-n junctions; Propagation delay; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18572
