Title :
In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantation
Author :
Swart, Pieter L. ; Lacquet, Beatrys M. ; Aharoni, Herzl
Author_Institution :
Mater. Lab., Rand Afrikaans Univ., Johannesburg, South Africa
fDate :
6/1/1992 12:00:00 AM
Abstract :
In situ reflectometry during ion implantation of 31P + onto single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 μA/cm2, has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose and the work required for a phase change are calculated from the experimental data
Keywords :
amorphisation; elemental semiconductors; ion implantation; phosphorus; reflectivity; silicon; substrates; 50 to 240 keV; Si:31P+; amorphization dose; crystalline-amorphous transition; dose; implantation energy; ion implantation; reflectivity; semiconductor; substrates; Amorphous materials; Annealing; Crystallization; Ion implantation; Optical materials; Optical refraction; Optical scattering; Optical variables control; Reflectivity; Reflectometry;
Journal_Title :
Nuclear Science, IEEE Transactions on
