Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings

Author

Tarof, L.E. ; Bruce, R. ; Knight, D.G. ; Yu, J. ; Kim, H.B. ; Baird, T.

Author_Institution

Bell-Northern Res., Ottawa, Ont., Canada

Volume

7

Issue

11

fYear

1995

Firstpage

1330

Lastpage

1332

Abstract

A novel single-growth planar avalanche photodiode (APD) structure without guard rings is described. InP-InGaAs separate absorption, charge sheet, grading, and multiplication (SAGCM) APD´s have been fabricated using the new edge breakdown suppression method. A very low, dark current of 0.6 nA at 0.98 of the breakdown voltage (BV) was measured for a 30-μm-diameter device. The maximum -3-dB electrical bandwidth was 6.1 GHz, and in the absence of obvious inductive peaking.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; 0.6 nA; 30 mum; 6.1 GHz; InP-InGaAs; InP-InGaAs separate absorption; breakdown voltage; charge sheet APDs; edge breakdown suppression method; electrical bandwidth; grading APDs; multiplication APDs; planar InP-InGaAs single-growth avalanche photodiodes; single-growth; very low dark current; Absorption; Avalanche photodiodes; Bandwidth; Current measurement; Dark current; Electric breakdown; Etching; Indium phosphide; Optical fiber devices; Voltage measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473488

Filename

473488