DocumentCode :
1054346
Title :
Temperature rise in multimesa devices
Author :
Holway, Lowell H., Jr.
Author_Institution :
Raytheon Research Division, Waltham, MA
Volume :
23
Issue :
10
fYear :
1976
fDate :
10/1/1976 12:00:00 AM
Firstpage :
1194
Lastpage :
1195
Abstract :
Closed form expressions are derived for the temperature of multimesa diodes arranged as trimesas, pentamesas, or N × N arrays.
Keywords :
Closed-form solution; Crosstalk; Electrons; Geometry; Heat sinks; Mathematics; Semiconductor diodes; Temperature; Thermal conductivity; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18574
Filename :
1478587
Link To Document :
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