Title :
High performance MOS varactor SPICE model
Author :
Senapati, B. ; Ehwald, K. ; Winkler, W. ; Furnhammer, F.
Author_Institution :
IHP Microelectron., Frankfurt, Germany
fDate :
11/7/2002 12:00:00 AM
Abstract :
A model is for presented a three-terminal MOS varactor for RF applications. The accuracy of the MOS varactor model is demonstrated by comparing simulation and measured device data at room and high temperatures. The relative mean error of the S-parameters between the measured and simulated data are less than 4%.
Keywords :
BiCMOS integrated circuits; Q-factor; S-parameters; SPICE; equivalent circuits; microwave diodes; semiconductor device models; varactors; 1 to 10 GHz; BiCMOS process; RF applications; S-parameter mean error; SPICE model; bias conditions; equivalent circuit; high temperatures; measured device data; quality factor; room temperature; simulation data; three-terminal MOS varactor; tuning element;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020978
