Ternary semiconductor ZnSe0.7Te0.3 nanowires

Ternary semiconductor ZnSe_0.7Te_0.3 nanowires (NWs) are synthesised by using a thermal evaporation method, and the as-synthesised NWs have a wurtzite structure with a growth direction of [001]. The electrical measurements are carried out based on nano-field-effect transistors fabricated by individual NWs, and the electron transport characteristics reveal that the ZnSe_0.7Te_0.3 NWs have p-type conductivity with a high-mobility (μ_h) of 0.9 cm² V^-1S^-1 and carrier concentration (n_h) 5 × 10¹⁸ cm^-3. Photoluminescence measurements for ZnSe_0.7Te_0.3 NWs show a dominant emission peaked at 478 nm which is the emission of free exciton.