DocumentCode
1054444
Title
The temperature dependence of the DC base and collector currents in silicon bipolar transistors
Author
Martinelli, Ramon C.
Author_Institution
RCA Laboratories, Princeton, NJ
Volume
23
Issue
11
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
1218
Lastpage
1224
Abstract
Detailed measurements have been made of the base and collector-current characteristics of both n-p-n and p-n-p silicon transistors as a function of temperature. The collector current shows ideal behavior over the temperature range -60 to 150°C in that 
. On the other hand, the base current is nonideal: 
, where 
. The nonideality of IB is the main source of the temperature dependence of 
. There is no evidence for bandgap narrowing in the devices we have investigated. The temperature dependence of the collector current is given by 
, where 
or 1.7 for n-p-n or p-n-p devices, respectively. 
eV. This result is consistent with the findings of others. The base current is a complicated function of temperature due to the presence of nonideal components.
. On the other hand, the base current is nonideal: , where . The nonideality of I . There is no evidence for bandgap narrowing in the devices we have investigated. The temperature dependence of the collector current is given by , where or 1.7 for n-p-n or p-n-p devices, respectively. eV. This result is consistent with the findings of others. The base current is a complicated function of temperature due to the presence of nonideal components.Keywords
Bipolar transistors; Current density; Current measurement; Helium; Impurities; Performance gain; Photonic band gap; Silicon; Temperature dependence; Temperature distribution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18582
Filename
1478595
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