Title :
A backside illuminated 400 × 400 charge-coupled device imager
Author :
Antcliffe, G.A. ; Hornbeck, L.J. ; Chan, W.W. ; Walker, J.W. ; Rhines, W.C. ; Collins, D.R.
Author_Institution :
Xerox Corporation, El Segundo, CA
Abstract :
Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 × 160 and 400 × 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24°C and at several operating frequencies between 10 kHz and 1 MHz.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18583
