Title :
I-4 CW room-temperature GaAs/InyGa1-yP DH lasers prepared by vapor-phase epitaxy
Author :
Olsen, G.H. ; Ettenberg, M.
fDate :
11/1/1976 12:00:00 AM
Keywords :
DH-HEMTs; Epitaxial growth; Gallium arsenide; Gas lasers; Laboratories; Laser tuning; Optical device fabrication; Optical materials; Temperature; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18590
