Title :
I-6 GaxIn1-xAsyP1-y-InP heterostructure lasers
Author :
Rossi, J.A. ; Hsieh, J.J. ; Donnelly, J.P.
fDate :
11/1/1976 12:00:00 AM
Keywords :
DH-HEMTs; Epitaxial growth; Gallium arsenide; Gas lasers; Indium phosphide; Laser tuning; Optical materials; Optical pulses; Temperature; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18591
