DocumentCode

1054527

Title

I-6 GaxIn1-xAsyP1-y-InP heterostructure lasers

Author

Rossi, J.A. ; Hsieh, J.J. ; Donnelly, J.P.

Volume

23

Issue

11

fYear

1976

fDate

11/1/1976 12:00:00 AM

Firstpage

1248

Lastpage

1248

Keywords

DH-HEMTs; Epitaxial growth; Gallium arsenide; Gas lasers; Indium phosphide; Laser tuning; Optical materials; Optical pulses; Temperature; Threshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1976.18591

Filename

1478604