Title :
1.3 μm InGaAsN vertical cavity surface emitting lasers grown by MOCVD
Author :
Takeuchi, T. ; Chang, Y.-L. ; Leary, M. ; Tandon, A. ; Luan, H.C. ; Bour, I. ; Corzine, S. ; Twist, R. ; Tan, M.
Author_Institution :
Agilent Technol. Labs., Palo Alto, CA, USA
fDate :
11/7/2002 12:00:00 AM
Abstract :
The first InGaAsN VCSELs grown by MOCVD with CW lasing wavelength longer than 1.3 μm are reported. The devices were of conventional p-i-n structure with doped DBR mirrors. CW lasing up to 65°C was observed, with a maximum output power at room temperature of 0.8 mW for multimode devices and nearly 0.3 mW for single-mode devices.
Keywords :
III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; surface emitting lasers; 0.3 mW; 0.8 mW; 1.3 micron; 65 degC; CW lasing; InGaAsN; InGaAsN VCSELs; MOCVD growth; doped DBR mirrors; multimode devices; p-i-n structure; single-mode devices; surface emitting lasers; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021000
