DocumentCode :
1054642
Title :
Temperature dependent steady-state characteristics of high-performance tunnel injection quantum dot lasers
Author :
Pradhan, S. ; Ghosh, S. ; Bhattacharya, P.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Volume :
38
Issue :
23
fYear :
2002
fDate :
11/7/2002 12:00:00 AM
Firstpage :
1449
Lastpage :
1450
Abstract :
Enhanced temperature stability in tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers is demonstrated. Value of T0=363 K in the temperature range 5°C0=202 K in the range 60°C\n\n\t\t
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser stability; photoluminescence; quantum dot lasers; tunnelling; 202 K; 363 K; 5 to 100 degC; In0.4Ga0.6As-GaAs; In0.4Ga0.6As/GaAs lasers; carrier leakage reduction; enhanced temperature stability; high-performance quantum dot lasers; nonradiative recombination; photoluminescence spectrum; semiconductor lasers; slope efficiency variation; temperature dependent steady-state characteristics; temperature-dependent light-current characteristics; tunnel injection quantum dot lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020835
Filename :
1068034
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1054642
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