The control of channeling phenomenon

The dependence of depth profile on a tilt and twist angle was investigated with a resolution of 0.05° using a stencil mask ion implanter that has less than 0.1° parallelism of ion beam. Angular dependence of depth profiles obtained by secondary ion mass spectrometry (SIMS) shows the channeling phenomenon can be controlled using a highly controlled parallel ion beam. This means that if tilt angle is controlled with a resolution of less than 0.1°, the variation caused by channeling phenomenon can be neglected. The threshold voltage data of n-type MOSFETs fabricated using a controlled parallel ion beam with resolution of less than 0.1° indicates that the variation is the same as that in the case of one fabricated using 7° implantation.