DocumentCode
1054672
Title
Three-dimensional MMIC technology: a possible solution to masterslice MMIC´s on GaAs and Si
Author
Tokumitsu, Tsuneo ; Aikawa, Masayoshi ; Kohiyama, Kenji
Author_Institution
NTT Wireless Syst. Labs., Kanagawa, Japan
Volume
5
Issue
11
fYear
1995
fDate
11/1/1995 12:00:00 AM
Firstpage
411
Lastpage
413
Abstract
A novel masterslice MMIC is presented that expands the possibilities for three-dimensional (or multilayer) MMIC technology. This MMIC incorporates two levels of ground metals, resulting in an effective selection of master-array elements on the wafer surface by using the lower-level metal and a circuit-stacking effect by the upper one. X-band amplifier and receiver MMIC´s on 3×1 and 6×3 array-units, respectively, are also demonstrated in very small areas
Keywords
MMIC amplifiers; cellular arrays; integrated circuit metallisation; microwave receivers; GaAs; MMIC amplifier; MMIC receiver; Si; X-band; circuit-stacking effect; ground metals; lower-level metal; master-array elements; masterslice MMICs; multilayer MMIC technology; three-dimensional MMIC technology; Circuit synthesis; Electrodes; Frequency; Gallium arsenide; MIM capacitors; MMICs; Nonhomogeneous media; Passive circuits; Polyimides; Resistors;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.473525
Filename
473525
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