Influence of Process chamber ambient on SiOC (k=2.9) ILD Cu damascene ashing

Author

Tokashiki, Ken ; Maruyama, Takuya ; Nishizawa, Atsushi

Author_Institution

Dry Etch Process Group, NEC Electron. Corp., Kanagawa, Japan

Volume

17

Issue

3

fYear

2004

Firstpage

305

Lastpage

310

Abstract

The influence of dry etch and ash chamber ambient on inorganic low-k SiOC (k=2.9) Cu damascene interconnects is studied. In order to minimize erosion and damage to the SiOC film and the SiCN liner, fluorine atom density in the process chamber must be characterized. Knowledge of this study is applicable to so called "all-in-one" processes-integration of low-k etch, post ashing, and liner etch simultaneously in the same process chamber. This enables an improvement of productivity.

Keywords

copper; dielectric materials; dielectric thin films; etching; interconnections; silicon compounds; Cu; Cu damascene ashing; SiCN liner; SiO₂-SiOC-SiCN; SiOC film; SiOC interlayer dielectrics; all-in-one processes integration; ash chamber ambient; dry etching; erosion; fluorine atom density; inorganic low-k Cu damascene interconnects; post ashing; process chamber ambient; Ash; Capacitance; Dry etching; Optical films; Plasma applications; Plasma measurements; Plasma temperature; Productivity; Spectroscopy; Wire; All-in-One process; Cu damascene; ashing; chamber ambient; low k;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2004.831927

Filename

1321127