Title :
A 12-GHz, 12-W HJFET amplifier with 48% peak power-added efficiency
Author :
Matsunaga, K. ; Okamoto, Y. ; Kuzuhara, M.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This letter describes a Ku-band power amplifier fabricated with a one-chip 0.45 μm×16.8 mm GaAs-based heterojunction FET (HJFET), in which a 40.9 dBm (12.3 W) output power with 48% power-added efficiency (PAE) and 10.1 dB linear gain was achieved at 12 GHz. To our knowledge, this is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency.
Keywords :
III-V semiconductors; JFET circuits; gallium arsenide; microwave power amplifiers; 0.45 micron; 10.1 dB; 12 GHz; 12.3 W; 16.8 mm; 48 percent; GaAs; HJFET amplifier; Ku-band; linear gain; one-chip GaAs-based heterojunction FET; output power; power-added efficiency; single FET power amplifier; Circuits; FETs; Gallium arsenide; Heterojunctions; High power amplifiers; Impedance matching; MESFETs; Performance gain; Power amplifiers; Power generation;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
