Title :
A monolithically integrated F-band resistive InAlAs/InGaAs/InP HFET mixer
Author :
Karlsson, C. ; Rorsman, N. ; Zirath, H.
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A monolithically integrated F-band resistive HFET mixer has been designed, simulated, fabricated, and characterized. The mixer is based on an InAlAs/InGaAs/InP HFET with 0.15 μm gate length. The measured minimum conversion loss is 9 dB at 112.5 GHz and an LO power of 4 dBm, which is the lowest conversion loss reported for resistive HFET mixers in this frequency range.
Keywords :
III-V semiconductors; MMIC mixers; aluminium compounds; field effect MIMIC; field effect analogue integrated circuits; gallium arsenide; indium compounds; losses; millimetre wave mixers; 0.15 micron; 112.5 GHz; 9 dB; EHF; F-band; InAlAs-InGaAs-InP; MIMIC; MM-wave mixer; conversion loss; monolithically integrated mixer; resistive HFET mixer; Frequency conversion; Frequency measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Loss measurement; MODFETs; Mixers; Power measurement;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
