Title :
IIIB-6 channeled substrate buried heterostructure (GaAl) As injection lasers
Author :
Kirkby, P.A. ; Lovelace, D.F. ; Thompson, G.H.B.
fDate :
11/1/1976 12:00:00 AM
Keywords :
Carrier confinement; Gallium arsenide; Geometrical optics; Laboratories; Laser modes; P-n junctions; Substrates; Telecommunication standards; Temperature; Waveguide lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18614
