Novel HBT with reduced thermal impedance

Author

Hill, Darrell ; Khatibzadeh, Ali ; Liu, William ; Kim, Tae ; Ikalainen, Pertti

Author_Institution

Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA

Volume

5

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

373

Lastpage

375

Abstract

Heterojunction bipolar transistors have been fabricated using a novel process in which the majority of the front side of the chip is metallized to serve as the groundplane. The completed chip is assembled inverted so that the emitters are next to the heat sink; base and collector are contacted using through-wafer vias and microstrip lines on the back side of the chip. These devices show a 50% reduction in thermal impedance compared to conventionally fabricated devices and have achieved power densities of 10 W/mm of emitter length. Such devices are expected to have substantially lower emitter inductance as well, which may lead to improved gain at higher frequencies

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor technology; thermal resistance; HBT; emitter inductance; fabrication; gain; groundplane; heat sink; heterojunction bipolar transistor; metallization; microstrip lines; power densities; thermal impedance; through-wafer vias; Assembly; Bipolar transistors; Electromagnetic heating; Gold; Heat sinks; Heterojunction bipolar transistors; Impedance; Inductance; Microstrip; Substrates;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.473538

Filename

473538