DocumentCode :
1054890
Title :
A 65 nm 2-Billion Transistor Quad-Core Itanium Processor
Author :
Stackhouse, Blaine ; Bhimji, Sal ; Bostak, Chris ; Bradley, Dave ; Cherkauer, Brian ; Desai, Jayen ; Francom, Erin ; Gowan, Mike ; Gronowski, Paul ; Krueger, Dan ; Morganti, Charles ; Troyer, Steve
Author_Institution :
Intel Corp., Fort Collins, CO
Volume :
44
Issue :
1
fYear :
2009
Firstpage :
18
Lastpage :
31
Abstract :
This paper describes an Itanium processor implemented in 65 nm process with 8 layers of Cu interconnect. The 21.5 mm by 32.5 mm die has 2.05B transistors. The processor has four dual-threaded cores, 30 MB of cache, and a system interface that operates at 2.4 GHz at 105degC . High speed serial interconnects allow for peak processor-to-processor bandwidth of 96 GB/s and peak memory bandwidth of 34 GB/s.
Keywords :
UHF integrated circuits; cache storage; copper; integrated circuit interconnections; microprocessor chips; multiprocessor interconnection networks; nanoelectronics; 2-billion transistor quad-core Itanium processor; 2.05 billion transistors; 30 MB cache; Cu; dual-threaded cores; frequency 2.4 GHz; high-speed serial interconnects; peak memory bandwidth; processor-to-processor bandwidth; size 65 nm; storage capacity 30 Mbit; system interface; temperature 105 degC; Bandwidth; Circuit synthesis; Clocks; Communication system control; Copper; Integrated circuit interconnections; Microprocessors; Packaging; Transistors; Voltage; 65-nm process technology; circuit design; clock distribution; computer architecture; microprocessor; on-die cache; voltage domains;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.2007150
Filename :
4735536
Link To Document :
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