DocumentCode

1054910

Title

IVB-6 an in-situ technique for anodic etch to voltage preparation of GaAs Read diodes

Author

Adams, R.L.

Volume

23

Issue

11

fYear

1976

fDate

11/1/1976 12:00:00 AM

Firstpage

1259

Lastpage

1259

Keywords

Annealing; Contracts; Etching; FETs; Fabrication; Gallium arsenide; Oxidation; Schottky diodes; Surface morphology; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1976.18629

Filename

1478642