Title :
IVB-7 capless annealing of ion implanted GaAs
fDate :
11/1/1976 12:00:00 AM
Keywords :
Annealing; Carrier confinement; Contracts; FETs; Fabrication; Gallium arsenide; Heterojunctions; Optical fiber communication; Power lasers; Semiconductor lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18630
