DocumentCode
1054998
Title
Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile
Author
Zhang, Guohe ; Shao, Zhibiao ; Zhou, Kai
Volume
55
Issue
3
fYear
2008
fDate
3/1/2008 12:00:00 AM
Firstpage
803
Lastpage
809
Abstract
A novel approximation of 2-D potential function perpendicular to the channel for fully depleted (FD) silicon-on-insulator (SOI) MOSFETs on films with vertical Gaussian profile is proposed in the paper, then an analytical threshold voltage model is derived. The model agrees well with the MEDICI numerical simulation results. It represents a feasible way to find the threshold voltage and gives some reference points in developing new 2-D models for nonuniform FD-SOI devices.
Keywords
Gaussian processes; MOSFET; silicon-on-insulator; short-channel FD-SOI MOSFET; threshold voltage model; vertical Gaussian profile; Analytical models; Annealing; Collision mitigation; Doping; Gaussian distribution; MOSFETs; Poisson equations; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Fully depleted (FD) silicon-on-insulator (SOI) MOSFETs; Gaussian; threshold voltage model;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.914832
Filename
4444828
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