DocumentCode

1055030

Title

VI-6 high gain GaAs-Ga1-xAlxAs heterojunction phototransistors

Author

Beneking, H. ; Mischel, P. ; Schul, G.

Volume

23

Issue

11

fYear

1976

fDate

11/1/1976 12:00:00 AM

Firstpage

1263

Lastpage

1264

Keywords

Absorption; Buffer layers; Detectors; Electrooptic devices; Epitaxial growth; Epitaxial layers; Gallium arsenide; Narrowband; Phototransistors; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1976.18640

Filename

1478653