Title :
VI-6 high gain GaAs-Ga1-xAlxAs heterojunction phototransistors
Author :
Beneking, H. ; Mischel, P. ; Schul, G.
fDate :
11/1/1976 12:00:00 AM
Keywords :
Absorption; Buffer layers; Detectors; Electrooptic devices; Epitaxial growth; Epitaxial layers; Gallium arsenide; Narrowband; Phototransistors; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18640
