Title :
Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
Author :
Colinet, Eric ; Durand, Cédric ; Duraffourg, Laurent ; Audebert, Patrick ; Dumas, Guillaume ; Casset, Fabrice ; Ollier, Eric ; Ancey, Pascal ; Carpentier, Jean-François ; Buchaillot, Lionel ; Ionescu, Adrian M.
Author_Institution :
CEA-LETI-MINATEC, Grenoble
Abstract :
Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronics. As an initial step toward full integration, an in-plane suspended gate MOSFET (SGMOSFET) compatible with a front-end CMOS has been developed. The device model, its fabrication, and its experimental measurement are presented. Performance obtained with this device is experimentally compared to the one obtained with a stand-alone NEMS readout circuit, which is used as a reference detection system. The 130 nm CMOS ASIC uses a bridge measurement technique and a high sensitive first stage to minimize the influence of any parasitic capacitances.
Keywords :
CMOS integrated circuits; application specific integrated circuits; nanoelectronics; CMOS ASIC; CMOS electronics; capacitive measurement; front-end CMOS process; nanoelectromechanical systems; parasitic capacitances; suspended gate MOSFET; ultrasensitive capacitive detection; Application specific integrated circuits; Bridge circuits; CMOS process; Displacement measurement; Fabrication; Integrated circuit measurements; MOSFET circuits; Measurement techniques; Nanoelectromechanical systems; Semiconductor device modeling; Capacitance measurement; NEMS devices; front-end CMOS co-integration; in-plane suspended-gate MOSFET; lateral SGMOSFET; nanodisplacement measurement;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2007448
