• DocumentCode
    1055096
  • Title

    A Sub-2 W Low Power IA Processor for Mobile Internet Devices in 45 nm High-k Metal Gate CMOS

  • Author

    Gerosa, Gianfranco ; Curtis, Steve ; Addeo, Michael D. ; Jiang, Bo ; Kuttanna, Belliappa ; Merchant, Feroze ; Patel, Binta ; Taufique, Mohammed H. ; Samarchi, Haytham

  • Author_Institution
    Intel Corp., Austin, TX
  • Volume
    44
  • Issue
    1
  • fYear
    2009
  • Firstpage
    73
  • Lastpage
    82
  • Abstract
    This paper describes a low power Intel Architecture (IA) processor specifically designed for Mobile Internet Devices (MID) with performance similar to mainstream Ultra-Mobile PCs. The design relies on high residency in a new low-power state in order to keep average power and idle power below 220 and 80 mW, respectively. The design consists of an in-order pipeline capable of issuing 2 instructions per cycle supporting 2 threads, 32 KB instruction and 24 KB data L1 caches, independent integer and floating point execution units, times86 front end execution unit, a 512 KB L2 cache and a 533 MT/s dual-mode (GTL and CMOS) front-side-bus (FSB). The design contains 47 million transistors in a die size under 25 mm2 manufactured in a 9-metal 45 nm CMOS process with optimized transistors for low leakage. Maximum thermal design power (TDP) consumption is measured at 2 W at 1.0 V, 90degC using a synthetic power-virus test at a frequency of 1.86 GHz.
  • Keywords
    CMOS digital integrated circuits; UHF integrated circuits; high-k dielectric thin films; low-power electronics; microprocessor chips; mobile computing; 24 KB data L1 caches; 32 KB instruction; 512 KB L2 cache; 533 MT/s dual-mode front-side-bus; GTL; Intel architecture processor; floating point execution units; frequency 1.86 GHz; high-k metal gate CMOS; mainstream ultramobile PCs; mobile Internet devices; pipeline; power 2 W; size 45 nm; synthetic power-virus test; temperature 90 degC; thermal design power consumption; voltage 1.0 V; x86 front end execution unit; CMOS process; Design optimization; High K dielectric materials; High-K gate dielectrics; Internet; Manufacturing processes; Personal communication networks; Pipelines; Process design; Low power Intel Architecture processor; mobile internet devices;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2008.2007170
  • Filename
    4735552