• DocumentCode
    1055144
  • Title

    Transistor design for low distortion at high frequencies

  • Author

    Abraham, Howard E. ; Meyer, Robert G.

  • Author_Institution
    Hewlett Packard Corporation, Loveland, CO
  • Volume
    23
  • Issue
    12
  • fYear
    1976
  • fDate
    12/1/1976 12:00:00 AM
  • Firstpage
    1290
  • Lastpage
    1297
  • Abstract
    The design of high-frequency bipolar transistors with very low distortion is described. Simple expressions for distortion are used to select device parameters for the optimization of distortion performance. The effect of epitaxial-layer characteristics on device performance is considered in detail, and the importance of collector depletion in achieving low distortion is shown. The influence of device geometry on distortion is considered, and the degradation caused by MOS capacitance is illustrated.
  • Keywords
    Bipolar transistors; Broadband amplifiers; Capacitance; Degradation; Equivalent circuits; Frequency; Geometry; Impedance; Negative feedback; Performance gain;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18652
  • Filename
    1478665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055144