• DocumentCode
    1055232
  • Title

    Modeling of emitter-base bulk and peripheral space-charge-layer recombination currents in bipolar transistors

  • Author

    Chamberlain, N.G. ; Roulston, D.J.

  • Author_Institution
    University of Waterloo, Ont., Canada
  • Volume
    23
  • Issue
    12
  • fYear
    1976
  • fDate
    12/1/1976 12:00:00 AM
  • Firstpage
    1345
  • Lastpage
    1346
  • Abstract
    The bulk and surface recombination currents of the E-B space-charge layer are related through a factor XFShaving the dimensions of length. The factor XFScan be determined experimentally and is an essential parameter for modeling hFEfall-off at low collector currents.
  • Keywords
    Bipolar transistors; Current density; Fabrication; Impurities; Iron; P-n junctions; Predictive models; Radiative recombination; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18661
  • Filename
    1478674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055232