Title :
Modeling of emitter-base bulk and peripheral space-charge-layer recombination currents in bipolar transistors
Author :
Chamberlain, N.G. ; Roulston, D.J.
Author_Institution :
University of Waterloo, Ont., Canada
fDate :
12/1/1976 12:00:00 AM
Abstract :
The bulk and surface recombination currents of the E-B space-charge layer are related through a factor XFShaving the dimensions of length. The factor XFScan be determined experimentally and is an essential parameter for modeling hFEfall-off at low collector currents.
Keywords :
Bipolar transistors; Current density; Fabrication; Impurities; Iron; P-n junctions; Predictive models; Radiative recombination; Spontaneous emission; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18661
