DocumentCode
1055255
Title
A comparison of effective doping densities of composite structures by hall and magnetoresistance measurements
Author
Upadhyayula, L.C. ; Enstrom, R.E. ; Nuese, C.J. ; Wilhelm, J.F. ; Appert, J.R.
Author_Institution
RCA Laboratories, Princeton, NJ
Volume
23
Issue
12
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
1348
Lastpage
1350
Abstract
An explanation is presented to account for discrepancies noted between donor densities determined by magnetoresistance and Hall measurements when high-resistivity layers are present in an epilayer-substrate composite. Experimental data on GaAs and InP samples show that net donor densities tend to reflect that of the most conducting portion of a Hall sample and the most resistive portion of a magnetoresistance sample.
Keywords
Conductivity measurement; Density measurement; Electrical resistance measurement; Epitaxial layers; Gallium arsenide; Indium phosphide; Magnetic field measurement; Magnetoresistance; Semiconductor device doping; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18663
Filename
1478676
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